IXTH06N220P3HV PDF Mode Download - MOSFET N-CH

Espesifikasyon pou IXTH06N220P3HV

Nimewo pati : IXTH06N220P3HV

Fabricant : IXYS

Deskripsyon : MOSFET N-CH

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 2200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 80 Ohm @ 300mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10.4nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 290pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 104W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247HV

Pake / Ka : TO-247-3 Variant

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXTH06N220P3HV

Entèn Nimewo Pati

AX-IXTH06N220P3HV

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

36102 moso

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pwodwi ki gen rapò pou IXTH06N220P3HV IXYS

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XCR3512XL-12FTG256I	Xilinx Inc.	IC CPLD 512MC 10.8NS 256BGA
EPM2210F256C3	Intel	IC CPLD 1700MC 7NS 256FBGA
XC2C512-7PQ208C	Xilinx Inc.	IC CPLD 512MC 7.1NS 208QFP
LC4512V-5TN176C	Lattice Semiconductor Corporation	IC CPLD 512MC 5NS 176TQFP
EPM1270F256C3N	Intel	IC CPLD 980MC 6.2NS 256FBGA
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IXTH06N220P3HV Mode

Espesifikasyon pou IXTH06N220P3HV

pwodwi ki gen rapò pou IXTH06N220P3HV IXYS