IXTB62N50L PDF Mode Download - MOSFET N-CH 500V 62A PLUS264

Espesifikasyon pou IXTB62N50L

Nimewo pati : IXTB62N50L

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 500V 62A PLUS264

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 62A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 31A, 20V

Vgs (th) (Max) @ Id : 5.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 550nC @ 20V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 11500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 800W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PLUS264™

Pake / Ka : TO-264-3, TO-264AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXTB62N50L

Entèn Nimewo Pati

AX-IXTB62N50L

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 500V 62A PLUS264

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

17608 moso

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AXE Semiconductor gen IXTB62N50L nan stock pou vann.

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