IXTA1N200P3HV PDF Mode Download - MOSFET N-CH 2000V 1A TO-263HV

Espesifikasyon pou IXTA1N200P3HV

Nimewo pati : IXTA1N200P3HV

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 2000V 1A TO-263HV

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 2000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 40 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 23.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 646pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263 (IXTA)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXTA1N200P3HV

Entèn Nimewo Pati

AX-IXTA1N200P3HV

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 2000V 1A TO-263HV

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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Disponib Kantite

71060 moso

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pwodwi ki gen rapò pou IXTA1N200P3HV IXYS

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IXTA1N200P3HV Mode

Espesifikasyon pou IXTA1N200P3HV

pwodwi ki gen rapò pou IXTA1N200P3HV IXYS