Espesifikasyon pou IXFT30N50P

Nimewo pati : IXFT30N50P
Fabricant : IXYS
Deskripsyon : MOSFET N-CH 500V 30A TO-268 D3
Seri : HiPerFET™, PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4150pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 460W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 500V 30A TO-268 D3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
85745 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFT30N50P nan stock pou vann.
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pwodwi ki gen rapò pou IXFT30N50P IXYS

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