IXFT18N100Q3 PDF Mode Download - MOSFET N-CH 1000V 18A TO-268

Espesifikasyon pou IXFT18N100Q3

Nimewo pati : IXFT18N100Q3

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 1000V 18A TO-268

Seri : HiPerFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 660 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 6.5V @ 4mA

Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 4890pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 830W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-268

Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXFT18N100Q3

Entèn Nimewo Pati

AX-IXFT18N100Q3

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 1000V 18A TO-268

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

42360 moso

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IXFT18N100Q3 Mode

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pwodwi ki gen rapò pou IXFT18N100Q3 IXYS