IXFT12N100F Mode
Espesifikasyon pou IXFT12N100F
Nimewo pati : IXFT12N100F
Fabricant : IXYS-RF
Deskripsyon : MOSFET N-CH 1000V 12A TO268
Seri : HiPerRF™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268 (IXFT)
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-IXFT12N100F
Fabricant
Kout Deskripsyon
MOSFET N-CH 1000V 12A TO268
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
46752 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IXFT12N100F nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou IXFT12N100F IXYS-RF
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|---|---|---|---|
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