Espesifikasyon pou IXFN39N90

Nimewo pati : IXFN39N90
Fabricant : IXYS
Deskripsyon : MOSFET N-CH 900V 39A SOT-227B
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 39A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 220 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 390nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9200pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 694W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SOT-227B
Pake / Ka : SOT-227-4, miniBLOC
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 900V 39A SOT-227B
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
15056 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFN39N90 nan stock pou vann.
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