IXFH320N10T2 PDF Mode Download - MOSFET N-CH 100V 320A TO-247

Espesifikasyon pou IXFH320N10T2

Nimewo pati : IXFH320N10T2

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 100V 320A TO-247

Seri : HiPerFET™, TrenchT2™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 320A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 430nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 26000pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1000W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247AD (IXFH)

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXFH320N10T2

Entèn Nimewo Pati

AX-IXFH320N10T2

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 100V 320A TO-247

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pwodwi ki gen rapò pou IXFH320N10T2 IXYS

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IXFH320N10T2 Mode

Espesifikasyon pou IXFH320N10T2

pwodwi ki gen rapò pou IXFH320N10T2 IXYS