IXCY01N90E PDF Mode Download - MOSFET N-CH 900V 0.25A TO-252

Espesifikasyon pou IXCY01N90E

Nimewo pati : IXCY01N90E

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 900V 0.25A TO-252

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 900V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 80 Ohm @ 50mA, 10V

Vgs (th) (Max) @ Id : 5V @ 25µA

Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 133pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 40W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXCY01N90E

Entèn Nimewo Pati

AX-IXCY01N90E

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 900V 0.25A TO-252

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Plon gratis / RoHS Konfòm

akouchman Tan

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Disponib Kantite

9388 moso

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