IRLW630ATM PDF Mode Download - MOSFET N-CH 200V 9A I2PAK

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Nimewo pati : IRLW630ATM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 200V 9A I2PAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 400 mOhm @ 4.5A, 5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 755pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 69W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK (TO-262)

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRLW630ATM

Entèn Nimewo Pati

AX-IRLW630ATM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 200V 9A I2PAK

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Plon gratis / RoHS Konfòm

akouchman Tan

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70295 moso

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IRLW630ATM Mode

Espesifikasyon pou IRLW630ATM

pwodwi ki gen rapò pou IRLW630ATM ON Semiconductor