IRLML6401TR PDF Mode Download - MOSFET P-CH 12V 4.3A SOT-23

Espesifikasyon pou IRLML6401TR

Nimewo pati : IRLML6401TR

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 12V 4.3A SOT-23

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 50 mOhm @ 4.3A, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 830pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.3W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Micro3™/SOT-23

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRLML6401TR

Entèn Nimewo Pati

AX-IRLML6401TR

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 12V 4.3A SOT-23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

63335 moso

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pri nou

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pwodwi ki gen rapò pou IRLML6401TR Infineon Technologies

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IRLML6401TR Mode

Espesifikasyon pou IRLML6401TR

pwodwi ki gen rapò pou IRLML6401TR Infineon Technologies