Espesifikasyon pou IRLD024

Nimewo pati : IRLD024
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 60V 2.5A 4-DIP
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 5V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 1.5A, 5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 5V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 870pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.3W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP
Pake / Ka : 4-DIP (0.300", 7.62mm)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 60V 2.5A 4-DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
62550 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRLD024 nan stock pou vann.
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