IRFSL4310PBF PDF Mode Download - MOSFET N-CH 100V 130A TO-262

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Nimewo pati : IRFSL4310PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 130A TO-262

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 130A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 7 mOhm @ 75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 250nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 7670pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-262

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

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IRFSL4310PBF

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AX-IRFSL4310PBF

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Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 130A TO-262

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pwodwi ki gen rapò pou IRFSL4310PBF Infineon Technologies

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pwodwi ki gen rapò pou IRFSL4310PBF Infineon Technologies