IRFL4105TRPBF PDF Mode Download - MOSFET N-CH 55V 3.7A SOT223

Espesifikasyon pou IRFL4105TRPBF

Nimewo pati : IRFL4105TRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 55V 3.7A SOT223

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 45 mOhm @ 3.7A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 660pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-223

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFL4105TRPBF

Entèn Nimewo Pati

AX-IRFL4105TRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 55V 3.7A SOT223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1120440 moso

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IRFL4105TRPBF Mode

Espesifikasyon pou IRFL4105TRPBF

pwodwi ki gen rapò pou IRFL4105TRPBF Infineon Technologies