IRFIBE30GPBF PDF Mode Download - MOSFET N-CH 800V 2.1A TO220FP

Espesifikasyon pou IRFIBE30GPBF

Nimewo pati : IRFIBE30GPBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 800V 2.1A TO220FP

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.1A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3 Ohm @ 1.3A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 35W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3 Full Pack, Isolated Tab

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFIBE30GPBF

Entèn Nimewo Pati

AX-IRFIBE30GPBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 800V 2.1A TO220FP

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Plon gratis / RoHS Konfòm

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pwodwi ki gen rapò pou IRFIBE30GPBF Vishay Siliconix

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IRFIBE30GPBF Mode

Espesifikasyon pou IRFIBE30GPBF

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