IRFIB7N50A PDF Mode Download - MOSFET N-CH 500V 6.6A TO220FP

Espesifikasyon pou IRFIB7N50A

Nimewo pati : IRFIB7N50A

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 500V 6.6A TO220FP

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 520 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 52nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1423pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 60W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3 Full Pack, Isolated Tab

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFIB7N50A

Entèn Nimewo Pati

AX-IRFIB7N50A

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 500V 6.6A TO220FP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

63030 moso

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IRFIB7N50A Mode

Espesifikasyon pou IRFIB7N50A

pwodwi ki gen rapò pou IRFIB7N50A Vishay Siliconix