IRFD9110PBF PDF Mode Download - MOSFET P-CH 100V 0.7A 4-DIP

Espesifikasyon pou IRFD9110PBF

Nimewo pati : IRFD9110PBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 100V 0.7A 4-DIP

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 700mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.2 Ohm @ 420mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 200pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.3W (Ta)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP

Pake / Ka : 4-DIP (0.300", 7.62mm)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFD9110PBF

Entèn Nimewo Pati

AX-IRFD9110PBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 100V 0.7A 4-DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

445330 moso

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pwodwi ki gen rapò pou IRFD9110PBF Vishay Siliconix

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IRFD9110PBF Mode

Espesifikasyon pou IRFD9110PBF

pwodwi ki gen rapò pou IRFD9110PBF Vishay Siliconix