IRFBC40STRR PDF Mode Download - MOSFET N-CH 600V 6.2A D2PAK

Espesifikasyon pou IRFBC40STRR

Nimewo pati : IRFBC40STRR

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 600V 6.2A D2PAK

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.2A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.2 Ohm @ 3.7A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta), 130W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRFBC40STRR

Entèn Nimewo Pati

AX-IRFBC40STRR

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 600V 6.2A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

63885 moso

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IRFBC40STRR Mode

Espesifikasyon pou IRFBC40STRR

pwodwi ki gen rapò pou IRFBC40STRR Vishay Siliconix