IRF8113GTRPBF PDF Mode Download - MOSFET N-CH 30V 17.2A 8-SOIC

Espesifikasyon pou IRF8113GTRPBF

Nimewo pati : IRF8113GTRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 17.2A 8-SOIC

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 5.6 mOhm @ 17.2A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 36nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2910pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRF8113GTRPBF

Entèn Nimewo Pati

AX-IRF8113GTRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 17.2A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

10184 moso

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pwodwi ki gen rapò pou IRF8113GTRPBF Infineon Technologies

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IRF8113GTRPBF Mode

Espesifikasyon pou IRF8113GTRPBF

pwodwi ki gen rapò pou IRF8113GTRPBF Infineon Technologies