Espesifikasyon pou IRF7834TR

Nimewo pati : IRF7834TR
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 19A 8-SOIC
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id : 2.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 44nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3710pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 30V 19A 8-SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
66800 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF7834TR nan stock pou vann.
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pwodwi ki gen rapò pou IRF7834TR Infineon Technologies

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