IRF6706S2TR1PBF PDF Mode Download - MOSFET N-CH 25V 17A DIRECTFET-S1

Espesifikasyon pou IRF6706S2TR1PBF

Nimewo pati : IRF6706S2TR1PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 25V 17A DIRECTFET-S1

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Ta), 63A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.8 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 25µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1810pF @ 13V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.8W (Ta), 26W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DIRECTFET S1

Pake / Ka : DirectFET™ Isometric S1

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRF6706S2TR1PBF

Entèn Nimewo Pati

AX-IRF6706S2TR1PBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 25V 17A DIRECTFET-S1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

53076 moso

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pwodwi ki gen rapò pou IRF6706S2TR1PBF Infineon Technologies

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EPM3064ATC44-7N	Intel	IC CPLD 64MC 7.5NS 44TQFP
M4A3-32/32-10JC	Lattice Semiconductor Corporation	IC CPLD 32MC 10NS 44PLCC
XCR3384XL-12TQG144C	Xilinx Inc.	IC CPLD 384MC 10.8NS 144QFP
M4A5-256/128-65YNC	Lattice Semiconductor Corporation	IC CPLD 256MC 6.5NS 208QFP
LC4384V-5FTN256I	Lattice Semiconductor Corporation	IC CPLD 384MC 5NS 256FTBGA
XCR3512XL-12PQG208I	Xilinx Inc.	IC CPLD 512MC 10.8NS 208QFP
EPM7256AEFI100-7	Intel	IC CPLD 256MC 7.5NS 100FBGA

IRF6706S2TR1PBF Mode

Espesifikasyon pou IRF6706S2TR1PBF

pwodwi ki gen rapò pou IRF6706S2TR1PBF Infineon Technologies