IRF6641TR1PBF PDF Mode Download - MOSFET N-CH 200V 4.6A DIRECTFET

Espesifikasyon pou IRF6641TR1PBF

Nimewo pati : IRF6641TR1PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 200V 4.6A DIRECTFET

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.6A (Ta), 26A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 59.9 mOhm @ 5.5A, 10V

Vgs (th) (Max) @ Id : 4.9V @ 150µA

Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2290pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.8W (Ta), 89W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DIRECTFET™ MZ

Pake / Ka : DirectFET™ Isometric MZ

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRF6641TR1PBF

Entèn Nimewo Pati

AX-IRF6641TR1PBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 200V 4.6A DIRECTFET

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Plon gratis / RoHS Konfòm

akouchman Tan

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pwodwi ki gen rapò pou IRF6641TR1PBF Infineon Technologies

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IRF6641TR1PBF Mode

Espesifikasyon pou IRF6641TR1PBF

pwodwi ki gen rapò pou IRF6641TR1PBF Infineon Technologies