IRF6612TRPBF PDF Mode Download - MOSFET N-CH 30V 24A DIRECTFET

Espesifikasyon pou IRF6612TRPBF

Nimewo pati : IRF6612TRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 24A DIRECTFET

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Ta), 136A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 24A, 10V

Vgs (th) (Max) @ Id : 2.25V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3970pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.8W (Ta), 89W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DIRECTFET™ MX

Pake / Ka : DirectFET™ Isometric MX

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRF6612TRPBF

Entèn Nimewo Pati

AX-IRF6612TRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 24A DIRECTFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

8989 moso

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IRF6612TRPBF Mode

Espesifikasyon pou IRF6612TRPBF

pwodwi ki gen rapò pou IRF6612TRPBF Infineon Technologies