IRF1104S PDF Mode Download - MOSFET N-CH 40V 100A D2PAK

Espesifikasyon pou IRF1104S

Nimewo pati : IRF1104S

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 40V 100A D2PAK

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 93nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 170W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IRF1104S

Entèn Nimewo Pati

AX-IRF1104S

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 40V 100A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

63590 moso

referans pri

~~USD 0~~

pri nou

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AXE Semiconductor gen IRF1104S nan stock pou vann.

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IRF1104S Mode

Espesifikasyon pou IRF1104S

pwodwi ki gen rapò pou IRF1104S Infineon Technologies