IPZ60R070P6FKSA1 PDF Mode Download - MOSFET N-CH 600V TO247-4

Espesifikasyon pou IPZ60R070P6FKSA1

Nimewo pati : IPZ60R070P6FKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 600V TO247-4

Seri : CoolMOS™ P6

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 53.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 70 mOhm @ 20.6A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 1.72mA

Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4750pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 391W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO247-4

Pake / Ka : TO-247-4

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPZ60R070P6FKSA1

Entèn Nimewo Pati

AX-IPZ60R070P6FKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 600V TO247-4

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

74790 moso

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pwodwi ki gen rapò pou IPZ60R070P6FKSA1 Infineon Technologies

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Espesifikasyon pou IPZ60R070P6FKSA1

pwodwi ki gen rapò pou IPZ60R070P6FKSA1 Infineon Technologies