IPSA70R750P7SAKMA1 PDF Mode Download - MOSFET COOLMOS 700V TO251-3

Espesifikasyon pou IPSA70R750P7SAKMA1

Nimewo pati : IPSA70R750P7SAKMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET COOLMOS 700V TO251-3

Seri : CoolMOS™ P7

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 700V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 750 mOhm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 70µA

Chaje Gate (Qg) (Max) @ Vgs : 8.3nC @ 400V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 306pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 34.7W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO251-3

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPSA70R750P7SAKMA1

Entèn Nimewo Pati

AX-IPSA70R750P7SAKMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET COOLMOS 700V TO251-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

563375 moso

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pwodwi ki gen rapò pou IPSA70R750P7SAKMA1 Infineon Technologies

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IPSA70R750P7SAKMA1 Mode

Espesifikasyon pou IPSA70R750P7SAKMA1

pwodwi ki gen rapò pou IPSA70R750P7SAKMA1 Infineon Technologies