IPP80N06S209AKSA2 PDF Mode Download - MOSFET N-CH 55V 80A TO220-3

Espesifikasyon pou IPP80N06S209AKSA2

Nimewo pati : IPP80N06S209AKSA2

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 55V 80A TO220-3

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9.1 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 4V @ 125µA

Chaje Gate (Qg) (Max) @ Vgs : 80nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2360pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 190W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO220-3-1

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPP80N06S209AKSA2

Entèn Nimewo Pati

AX-IPP80N06S209AKSA2

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 55V 80A TO220-3

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Plon gratis / RoHS Konfòm

akouchman Tan

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271855 moso

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IPP80N06S209AKSA2 Mode

Espesifikasyon pou IPP80N06S209AKSA2

pwodwi ki gen rapò pou IPP80N06S209AKSA2 Infineon Technologies