IPP65R310CFDXKSA1 PDF Mode Download - MOSFET N-CH 650V 11.4A TO220

Espesifikasyon pou IPP65R310CFDXKSA1

Nimewo pati : IPP65R310CFDXKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 650V 11.4A TO220

Seri : CoolMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 310 mOhm @ 4.4A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 440µA

Chaje Gate (Qg) (Max) @ Vgs : 41nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 104.2W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPP65R310CFDXKSA1

Entèn Nimewo Pati

AX-IPP65R310CFDXKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 650V 11.4A TO220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

171280 moso

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pwodwi ki gen rapò pou IPP65R310CFDXKSA1 Infineon Technologies

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IPP65R310CFDXKSA1 Mode

Espesifikasyon pou IPP65R310CFDXKSA1

pwodwi ki gen rapò pou IPP65R310CFDXKSA1 Infineon Technologies