IPP65R074C6XKSA1 PDF Mode Download - MOSFET N-CH 650V 57.7A TO220

Espesifikasyon pou IPP65R074C6XKSA1

Nimewo pati : IPP65R074C6XKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 650V 57.7A TO220

Seri : CoolMOS™

Estati Pati : Last Time Buy

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 57.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 74 mOhm @ 13.9A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 1.4mA

Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3020pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 480.8W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPP65R074C6XKSA1

Entèn Nimewo Pati

AX-IPP65R074C6XKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 650V 57.7A TO220

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Plon gratis / RoHS Konfòm

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pwodwi ki gen rapò pou IPP65R074C6XKSA1 Infineon Technologies

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Espesifikasyon pou IPP65R074C6XKSA1

pwodwi ki gen rapò pou IPP65R074C6XKSA1 Infineon Technologies