IPI90R1K0C3XKSA1 PDF Mode Download - MOSFET N-CH 900V 5.7A TO-262

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Nimewo pati : IPI90R1K0C3XKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 900V 5.7A TO-262

Seri : CoolMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 900V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1 Ohm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 370µA

Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 850pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 89W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO262-3

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

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IPI90R1K0C3XKSA1

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Infineon Technologies

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MOSFET N-CH 900V 5.7A TO-262

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pwodwi ki gen rapò pou IPI90R1K0C3XKSA1 Infineon Technologies