IPI80N06S407AKSA2 PDF Mode Download - MOSFET N-CH 60V 80A TO262-3

Espesifikasyon pou IPI80N06S407AKSA2

Nimewo pati : IPI80N06S407AKSA2

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 60V 80A TO262-3

Seri : Automotive, AEC-Q101, OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 7.4 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 40µA

Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 79W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO262-3-1

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPI80N06S407AKSA2

Entèn Nimewo Pati

AX-IPI80N06S407AKSA2

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 60V 80A TO262-3

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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393500 moso

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pwodwi ki gen rapò pou IPI80N06S407AKSA2 Infineon Technologies

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pwodwi ki gen rapò pou IPI80N06S407AKSA2 Infineon Technologies