IPI034NE7N3 G Mode
Espesifikasyon pou IPI034NE7N3 G
Nimewo pati : IPI034NE7N3 G
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 75V 100A TO262-3
Seri : OptiMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 3.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 155µA
Chaje Gate (Qg) (Max) @ Vgs : 117nC @ 10V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 8130pF @ 37.5V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 214W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 75V 100A TO262-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
51858 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IPI034NE7N3 G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou IPI034NE7N3 G Infineon Technologies
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