IPD60R380P6BTMA1 PDF Mode Download - MOSFET N-CH 600V 3TO252

Espesifikasyon pou IPD60R380P6BTMA1

Nimewo pati : IPD60R380P6BTMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 600V 3TO252

Seri : CoolMOS™ P6

Estati Pati : Discontinued at Digi-Key

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 380 mOhm @ 3.8A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 320µA

Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 877pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 83W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TO252-3

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPD60R380P6BTMA1

Entèn Nimewo Pati

AX-IPD60R380P6BTMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 600V 3TO252

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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pwodwi ki gen rapò pou IPD60R380P6BTMA1 Infineon Technologies

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IPD60R380P6BTMA1 Mode

Espesifikasyon pou IPD60R380P6BTMA1

pwodwi ki gen rapò pou IPD60R380P6BTMA1 Infineon Technologies