IPD180N10N3GATMA1 Mode
Espesifikasyon pou IPD180N10N3GATMA1
Nimewo pati : IPD180N10N3GATMA1
Fabricant : Infineon Technologies
Deskripsyon : MV POWER MOS
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 18 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 33µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 71W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MV POWER MOS
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
971645 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IPD180N10N3GATMA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou IPD180N10N3GATMA1 Infineon Technologies
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Lattice Semiconductor Corporation | IC CPLD 512MC 7.5NS 256FTBGA | ||
| Intel | IC CPLD 256MC 5.5NS 100TQFP | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 208QFP | ||
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| Xilinx Inc. | IC CPLD 384MC 9NS 144QFP | ||
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| Intel | IC CPLD 256MC 7.5NS 100TQFP | ||
| Xilinx Inc. | IC CPLD 512MC 7.1NS 256BGA | ||
| Lattice Semiconductor Corporation | IC CPLD 512MC 7.5NS 352SBGA |