IPC022N03L3X1SA1 PDF Mode Download - MOSFET N-CH 30V 1A SAWN ON FOIL

Espesifikasyon pou IPC022N03L3X1SA1

Nimewo pati : IPC022N03L3X1SA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 1A SAWN ON FOIL

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 50 mOhm @ 2A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Sawn on foil

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

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IPC022N03L3X1SA1

Entèn Nimewo Pati

AX-IPC022N03L3X1SA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 1A SAWN ON FOIL

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1914065 moso

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pwodwi ki gen rapò pou IPC022N03L3X1SA1 Infineon Technologies

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IPC022N03L3X1SA1 Mode

Espesifikasyon pou IPC022N03L3X1SA1

pwodwi ki gen rapò pou IPC022N03L3X1SA1 Infineon Technologies