IPB65R660CFDAATMA1 Mode
Espesifikasyon pou IPB65R660CFDAATMA1
Nimewo pati : IPB65R660CFDAATMA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH TO263-3
Seri : Automotive, AEC-Q101, CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 660 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 543pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 62.5W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH TO263-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
412855 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IPB65R660CFDAATMA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou IPB65R660CFDAATMA1 Infineon Technologies
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Intel | IC CPLD 512MC 10NS 256FBGA | ||
| Intel | IC CPLD 256MC 7.5NS 100TQFP | ||
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| Xilinx Inc. | IC CPLD 512MC 10.8NS 208QFP | ||
| Xilinx Inc. | IC CPLD 512MC 9.2NS 324BGA | ||
| Xilinx Inc. | IC CPLD 384MC 9NS 208QFP |