IPB65R150CFDATMA1 PDF Mode Download - MOSFET N-CH 650V 22.4A TO-263

Espesifikasyon pou IPB65R150CFDATMA1

Nimewo pati : IPB65R150CFDATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 650V 22.4A TO-263

Seri : CoolMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22.4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 150 mOhm @ 9.3A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 900µA

Chaje Gate (Qg) (Max) @ Vgs : 86nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2340pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 195.3W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPB65R150CFDATMA1

Entèn Nimewo Pati

AX-IPB65R150CFDATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 650V 22.4A TO-263

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Plon gratis / RoHS Konfòm

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IPB65R150CFDATMA1 Mode

Espesifikasyon pou IPB65R150CFDATMA1

pwodwi ki gen rapò pou IPB65R150CFDATMA1 Infineon Technologies