IPB60R190P6ATMA1 PDF Mode Download - MOSFET N-CH 600V TO263-3

Espesifikasyon pou IPB60R190P6ATMA1

Nimewo pati : IPB60R190P6ATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 600V TO263-3

Seri : CoolMOS™ P6

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20.2A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 190 mOhm @ 7.6A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 630µA

Chaje Gate (Qg) (Max) @ Vgs : 37nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1750pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 151W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPB60R190P6ATMA1

Entèn Nimewo Pati

AX-IPB60R190P6ATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 600V TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52764 moso

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IPB60R190P6ATMA1 Mode

Espesifikasyon pou IPB60R190P6ATMA1

pwodwi ki gen rapò pou IPB60R190P6ATMA1 Infineon Technologies