IPB47N10S33ATMA1 PDF Mode Download - MOSFET N-CH 100V 47A TO263-3

Espesifikasyon pou IPB47N10S33ATMA1

Nimewo pati : IPB47N10S33ATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 47A TO263-3

Seri : SIPMOS®

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 47A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 33 mOhm @ 33A, 10V

Vgs (th) (Max) @ Id : 4V @ 2mA

Chaje Gate (Qg) (Max) @ Vgs : 105nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 175W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TO263-3-2

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPB47N10S33ATMA1

Entèn Nimewo Pati

AX-IPB47N10S33ATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 47A TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

448405 moso

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pwodwi ki gen rapò pou IPB47N10S33ATMA1 Infineon Technologies

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IPB47N10S33ATMA1 Mode

Espesifikasyon pou IPB47N10S33ATMA1

pwodwi ki gen rapò pou IPB47N10S33ATMA1 Infineon Technologies