IPA60R650CEXKSA1 PDF Mode Download - MOSFET N-CH 600V TO-220-3

Espesifikasyon pou IPA60R650CEXKSA1

Nimewo pati : IPA60R650CEXKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 600V TO-220-3

Seri : CoolMOS™ CE

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 650 mOhm @ 2.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 20.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 440pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 28W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO220-FP

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IPA60R650CEXKSA1

Entèn Nimewo Pati

AX-IPA60R650CEXKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 600V TO-220-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

396270 moso

referans pri

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pri nou

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AXE Semiconductor gen IPA60R650CEXKSA1 nan stock pou vann.

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IPA60R650CEXKSA1 Mode

Espesifikasyon pou IPA60R650CEXKSA1

pwodwi ki gen rapò pou IPA60R650CEXKSA1 Infineon Technologies