GC05MPS12-252 Mode
Espesifikasyon pou GC05MPS12-252
Nimewo pati : GC05MPS12-252
Fabricant : GeneSiC Semiconductor
Deskripsyon : SIC DIODE 1200V 5A TO-252-2
Seri : -
Estati Pati : Active
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 27A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 5A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 4µA @ 1200V
Kapasite @ Vr, F : 359pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : TO-252-2
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
SIC DIODE 1200V 5A TO-252-2
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
134090 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen GC05MPS12-252 nan stock pou vann.
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pwodwi ki gen rapò pou GC05MPS12-252 GeneSiC Semiconductor
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
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