Espesifikasyon pou GA20JT12-247

Nimewo pati : GA20JT12-247
Fabricant : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1.2KV 20A
Seri : -
Estati Pati : Obsolete
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 70 mOhm @ 20A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 282W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AB
Pake / Ka : TO-247-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
TRANS SJT 1.2KV 20A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
16824 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GA20JT12-247 nan stock pou vann.
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