FDS5170N7 PDF Mode Download - MOSFET N-CH 60V 10.6A 8-SOIC

Espesifikasyon pou FDS5170N7

Nimewo pati : FDS5170N7

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 10.6A 8-SOIC

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 12 mOhm @ 10.6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 71nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2889pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

FDS5170N7

Entèn Nimewo Pati

AX-FDS5170N7

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 10.6A 8-SOIC

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Plon gratis / RoHS Konfòm

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pwodwi ki gen rapò pou FDS5170N7 ON Semiconductor

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FDS5170N7 Mode

Espesifikasyon pou FDS5170N7

pwodwi ki gen rapò pou FDS5170N7 ON Semiconductor