FDP55N06 PDF Mode Download - MOSFET N-CH 60V 55A TO-220

Espesifikasyon pou FDP55N06

Nimewo pati : FDP55N06

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 55A TO-220

Seri : UniFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 55A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 22 mOhm @ 27.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 37nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 1510pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 114W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

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FDP55N06

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AX-FDP55N06

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ON Semiconductor

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MOSFET N-CH 60V 55A TO-220

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pwodwi ki gen rapò pou FDP55N06 ON Semiconductor

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