FDP16N50 PDF Mode Download - MOSFET N-CH 500V 16A TO-220

Espesifikasyon pou FDP16N50

Nimewo pati : FDP16N50

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 500V 16A TO-220

Seri : UniFET™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 380 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1945pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 200W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

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FDP16N50

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AX-FDP16N50

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ON Semiconductor

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MOSFET N-CH 500V 16A TO-220

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XCR3384XL-12TQ144C	Xilinx Inc.	IC CPLD 384MC 10.8NS 144QFP

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pwodwi ki gen rapò pou FDP16N50 ON Semiconductor