Espesifikasyon pou FDMS86101

Nimewo pati : FDMS86101
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 12.4A POWER56
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 104W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PQFN (5x6)
Pake / Ka : 8-PowerTDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 100V 12.4A POWER56
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
617420 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDMS86101 nan stock pou vann.
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pwodwi ki gen rapò pou FDMS86101 ON Semiconductor

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