EPC2212 PDF Mode Download - AEC-Q101 GAN FET 100V 13.5 MOHM

Espesifikasyon pou EPC2212

Nimewo pati : EPC2212

Fabricant : EPC

Deskripsyon : AEC-Q101 GAN FET 100V 13.5 MOHM

Seri : eGaN®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 13.5 mOhm @ 11A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 3mA

Chaje Gate (Qg) (Max) @ Vgs : 4nC @ 5V

Vgs (Max) : +6V, -4V

Antre kapasite (Ciss) (Max) @ Vds : 407pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Die

Pake / Ka : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

EPC2212

Entèn Nimewo Pati

AX-EPC2212

Fabricant

EPC

Kout Deskripsyon

AEC-Q101 GAN FET 100V 13.5 MOHM

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Plon gratis / RoHS Konfòm

akouchman Tan

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363040 moso

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EPC2212 Mode

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