DMN61D8LVTQ-13 Mode
Espesifikasyon pou DMN61D8LVTQ-13
Nimewo pati : DMN61D8LVTQ-13
Fabricant : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 60V 0.63A TSOT26
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 630mA
RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 0.74nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 12.9pF @ 12V
Pouvwa - Max : 820mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : TSOT-26
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 60V 0.63A TSOT26
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2593495 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen DMN61D8LVTQ-13 nan stock pou vann.
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- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou DMN61D8LVTQ-13 Diodes Incorporated
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