CSD87312Q3E Mode
Espesifikasyon pou CSD87312Q3E
Nimewo pati : CSD87312Q3E
Fabricant : Texas Instruments
Deskripsyon : MOSFET 2N-CH 30V 27A 8VSON
Seri : NexFET™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Common Source
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 27A
RD sou (Max) @ Id, Vgs : 33 mOhm @ 7A , 8V
Vgs (th) (Max) @ Id : 1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 1250pF @ 15V
Pouvwa - Max : 2.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : 8-VSON (3.3x3.3)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-CSD87312Q3E
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 30V 27A 8VSON
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1084425 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen CSD87312Q3E nan stock pou vann.
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- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou CSD87312Q3E Texas Instruments
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