Espesifikasyon pou CSD16327Q3

Nimewo pati : CSD16327Q3
Fabricant : Texas Instruments
Deskripsyon : MOSFET N-CH 25V 60A 8SON
Seri : NexFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 3V, 8V
RD sou (Max) @ Id, Vgs : 4 mOhm @ 24A, 8V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.4nC @ 4.5V
Vgs (Max) : +10V, -8V
Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 12.5V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-VSON-CLIP (3.3x3.3)
Pake / Ka : 8-PowerTDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 25V 60A 8SON
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1047035 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen CSD16327Q3 nan stock pou vann.
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pwodwi ki gen rapò pou CSD16327Q3 Texas Instruments

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